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TAK CHEONG
(R)
SEMICONDUCTOR
500 mW DO-34 Hermetically
Sealed Glass Zener Voltage Regulators
AXIAL LEAD DO34
Absolute Maximum Ratings
Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature
TA = 25C unless otherwise noted Value 500 -65 to +175 +175 230 Units
DEVICE MARKING DIAGRAM
C C C
L xxx T (tolerance) Band color
Lead Temperature (1/16" from case for 10 seconds)
These ratings are limiting values above which the serviceability of the diode may be impaired.
=Tak Cheong Logo =Device Code TCMTZJxxx =A, B, C or D =Black
Specification Features:
Zener Voltage Range 2.0 to 39 Volts DO-34 Package (JEDEC DO-204) Through-Hole Device Type Mounting Hermetically Sealed Glass Compression Bonded Construction All External Surfaces Are Corrosion Resistant And Lads Are Readily Solderable RoHS Compliant Solder Hot Dip Tin (Sn) Terminal Finish Cathode Indicated By Polarity Band
ELECTRICAL SYMBOL Cathode Anode
Electrical Characteristics TA = 25C unless otherwise noted VZ@IZT T Device Type Tolerance Min Nom Max TCMTZJ2V0 TCMTZJ2V2 TCMTZJ2V4 TCMTZJ2V7 TCMTZJ3V0 TCMTZJ3V3 TCMTZJ3V6 TCMTZJ3V9 TCMTZJ4V3 A B A B A B A B A B A B A B A B A B C 5.5% 4.3% 4.0% 4.1% 3.9% 4.0% 4.0% 3.9% 3.7% 3.4% 3.4% 3.1% 3.6% 3.3% 3.5% 3.3% 3.0% 3.0% 3.0% 1.880 2.020 2.120 2.220 2.330 2.430 2.540 2.690 2.850 3.010 3.160 3.320 3.455 3.600 3.740 3.890 4.040 4.170 4.300 1.990 2.110 2.210 2.315 2.425 2.530 2.645 2.800 2.960 3.115 3.270 3.425 3.575 3.723 3.875 4.025 4.165 4.300 4.435 2.100 2.200 2.300 2.410 2.520 2.630 2.750 2.910 3.070 3.220 3.380 3.530 3.695 3.845 4.010 4.160 4.290 4.430 4.570
Izt (mA) 5 5 5 5 5 5 5 5 5
L xxx T
mW
Zzt@Izt (Ohms) Max 100 100 100 110 120 120 100 100 100
Zzk@Izk (Ohms) Max 1000 1000 1000 1000 1000 1000 1000 1000 1000
Izk (mA) 0.5 0.5 0.5 0.5 0.5 0.5 1 1 1
IR @VR (uA) Max 120 100 120 100 50 20 10 5 5
VR (V) 0.5 0.7 1.0 1.0 1.0 1.0 1.0 1.0 1.0
Number: DB-054 July 2008 / C
Page 1
TCMTZJ2V0 through TCMTZJ39V
TAK CHEONG
(R)
SEMICONDUCTOR
Zzt@Izt (Ohms) Max 80 Zzk@Izk (Ohms) Max 900 Izk (mA) 1 IR@VR (uA) Max 5 VR (V) 1.0
Electrical Characteristics TA = 25C unless otherwise noted Izt VZ@Izt T Device Type (mA) Tolerance Min Nom Max TCMTZJ4V7 A B C A B C A B C A B C A B C A B C A B C A B C A B C D A B C A B C A B C A B C A B C A B C A B C D 2.6% 2.8% 2.7% 2.6% 2.6% 2.7% 2.4% 2.5% 2.6% 2.7% 2.6% 2.5% 2.6% 2.6% 2.6% 2.7% 2.6% 2.5% 2.6% 2.6% 2.5% 2.6% 2.5% 2.6% 2.6% 2.6% 2.5% 2.5% 2.6% 2.6% 2.5% 2.5% 2.6% 2.6% 2.6% 2.6% 2.6% 2.5% 2.6% 2.5% 2.6% 2.6% 2.5% 2.5% 2.5% 2.6% 2.5% 2.5% 2.5% 2.5% 4.44 4.55 4.68 4.81 4.94 5.09 5.28 5.45 5.61 5.78 5.96 6.12 6.29 6.49 6.66 6.85 7.07 7.29 7.53 7.78 8.03 8.29 8.57 8.83 9.12 9.41 9.70 9.94 10.18 10.50 10.82 11.13 11.44 11.74 12.11 12.55 12.99 13.44 13.89 14.35 14.80 15.25 15.69 16.22 16.82 17.42 18.02 18.63 19.23 19.72 4.56 4.68 4.81 4.94 5.07 5.23 5.41 5.59 5.76 5.94 6.12 6.28 6.46 6.66 6.84 7.04 7.26 7.48 7.73 7.99 8.24 8.51 8.79 9.07 9.36 9.66 9.95 10.19 10.45 10.78 11.10 11.42 11.74 12.05 12.43 12.88 13.33 13.79 14.26 14.72 15.19 15.65 16.10 16.64 17.26 17.88 18.49 19.11 19.73 20.22 4.68 4.80 4.93 5.07 5.20 5.37 5.55 5.73 5.91 6.09 6.27 6.44 6.63 6.83 7.01 7.22 7.45 7.67 7.92 8.19 8.45 8.73 9.01 9.30 9.59 9.90 10.20 10.44 10.71 11.05 11.38 11.71 12.03 12.35 12.75 13.21 13.66 14.13 14.62 15.09 15.57 16.04 16.51 17.06 17.70 18.33 18.96 19.59 20.22 20.72 5
TCMTZJ5V1
5
80
800
1
5
1.5
TCMTZJ5V6
5
60
500
1
5
2.5
TCMTZJ6V2
5
60
300
1
5
3.0
TCMTZJ6V8
5
20
150
0.5
2
3.5
TCMTZJ7V5
5
20
120
0.5
0.5
4.0
TCMTZJ8V2
5
20
120
0.5
0.5
5.0
TCMTZJ9V1
5
25
120
0.5
0.5
6.0
TCMTZJ10V
5
30
120
0.5
0.2
7.0
TCMTZJ11V
5
30
120
0.5
0.2
8.0
TCMTZJ12V
5
30
110
0.5
0.2
9.0
TCMTZJ13V
5
35
110
0.5
0.2
10
TCMTZJ15V
5
40
110
0.5
0.2
11
TCMTZJ16V
5
40
150
0.5
0.2
12
TCMTZJ18V
5
45
150
0.5
0.2
13
TCMTZJ20V
5
55
200
0.5
0.2
15
Number: DB-054 July 2008 / C
Page 2
TAK CHEONG
(R)
SEMICONDUCTOR
Izt (mA) Zzt@Izt (Ohms) Max 30 Zzk@Izk (Ohms) Max 200 Izk (mA) IR@VR (uA) Max 0.2 VR (V)
Electrical Characteristics TA = 25C unless otherwise noted VZ@Izt T Device Type Tolerance Min Nom Max
A 2.2% 20.15 20.68 21.20 B 2.5% 20.64 21.18 21.71 TCMTZJ22V 5 C 2.5% 21.08 21.63 22.17 D 2.5% 21.52 22.08 22.63 A 2.5% 22.05 22.62 23.18 B 2.5% 22.61 23.19 23.77 TCMTZJ24V 5 C 2.5% 23.12 23.72 24.31 D 2.5% 23.63 24.24 24.85 A 2.5% 24.26 24.89 25.52 B 2.5% 24.97 25.62 26.26 TCMTZJ27V 5 C 2.5% 25.63 26.29 26.95 D 2.5% 26.29 26.97 27.64 A 2.5% 26.99 27.69 28.39 B 2.5% 27.70 28.42 29.13 TCMTZJ30V 5 C 2.5% 28.36 29.09 29.82 D 2.5% 29.02 29.77 30.51 A 2.5% 29.68 30.45 31.22 B 2.5% 30.32 31.10 31.88 TCMTZJ33V 5 C 2.5% 30.90 31.70 32.50 D 2.5% 31.49 32.30 33.11 A 2.5% 32.14 32.97 33.79 B 2.5% 32.79 33.64 34.49 TCMTZJ36V 5 C 2.5% 33.40 34.27 35.13 D 2.5% 34.01 34.89 35.77 A 2.5% 34.68 35.58 36.47 B 2.5% 35.36 36.28 37.19 TCMTZJ39V 5 C 2.5% 36.00 36.93 37.85 D 2.5% 36.63 37.58 38.52 VF (forward voltage) = 1.2 V maximum @ IF = 200mA for all types Note:
0.5
17
35
200
0.5
0.2
19
45
250
0.5
0.2
21
55
250
0.5
0.2
23
65
250
0.5
0.2
25
75
250
0.5
0.2
27
85
250
0.5
0.2
30
1. The zener voltage subdivision (VZ) is measured 40mS after diode is powered up. 2. The operating resistance (Zzt and Zzk) is measured by superimposing a minute alternation current in the regulated current (Iz). 3. When ordering, please specify tolerance A, B, C or D.
Number: DB-054 July 2008 / C
Page 3
TAK CHEONG
Typical Characteristics
600
(R)
SEMICONDUCTOR
1000
PD-Power Passipation [mW]
Total Capacitance [pF]
500 400 300 200 100 0 0 40
VR = 0V
f = 1MHz Ta = 25
VR = 5V
100
VR = 2V
VR = 20V
10
1
Temperature [ ]
80
120
160
200
0
5
10
15
20
25
30
35
40
VZ - Reverse Voltage [V]
Figure 1. Power Dissipation vs Ambient Temperature
Valid provided leads at a distance of 0.8mm from case are kept at ambient temperature
Figure 2. Total Capacitance
Differential Zener Impedance []
10000
Iz=1mA Iz=2mA Iz=5mA
1000
Ta = 25
Forward Current [mA] 100
Ta = 25
100
Iz=10mA
10
1
1
0.01 0 5 10 15 20 25 30 VZ - Reverse Voltage [V] 35 40
0.1 0 0.2 0.4 0.6 0.8 VF - Forw ard Voltage [m V] 1 1.2
Figure 3. Differential Impedance vs. Zener Voltage
Figure 4. Forward Current vs. Forward Voltage
1000 PD = 500mW Ta = 25 Reverse Current [mA] 10
0.1
0.001 0 5 10 15 20 25 30 VZ - Reverse Voltage [V] 35 40
Figure 5. Reverse Current vs. Reverse Voltage
Number: DB-054 July 2008 / C
Page 4
TAK CHEONG
Package Outline
Package
(R)
SEMICONDUCTOR
Case Outline
DO-34
DO-34 Dimension Min A B C D 0.46 2.16 25.40 1.27 Millimeters Max 0.55 3.04 38.10 1.90 Min 0.018 0.085 1.000 0.050 Inches Max .0022 0.120 1.500 0.075
Note: 1.0 All dimensions are within JEDEC standard. 2.0 DO-34 polarity denoted by cathode band.
Number: DB-054 July 2008 / C
Page 5
TAK CHEONG
(R)
DISC LA I MER NOTIC E
NOTICE
The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com, or consult your nearest Tak Cheong's sales office for further assistance.
Number: DB-100 April 14, 2008 / A

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